自营库存
原装正品 现货库存- 品牌:
-
- 连续漏极电流(Id)(25°C 时):
-
- 漏源电压(Vdss):
-
- 栅源极阈值电压:
-
- 漏源导通电阻:
-
- 最大功率耗散(Ta):
-
86 条记录
含增值税
|
|||
描述:N沟道,25V,100A,1mΩ@10V
|
含增值税
|
||
含增值税
|
|||
含增值税
|
|||
描述:N沟道,30V,4A,50mΩ@10V
|
含增值税
|
||
描述:MOSFETN-CH30V8.9A8-SOIC
|
含增值税
|
||
含增值税
|
|||
描述:双P沟道,-30V,-2.9A,0.111Ω@-10V
|
含增值税
|
||
描述:MOS全桥,30V/4.7A(-30V/-3.5A)
|
含增值税
|
||
含增值税
|
|||
含增值税
|
|||
描述:双N沟道,30V,3.7A,0.058Ω@10V
|
含增值税
|
||
含增值税
|
|||
含增值税
|
|||
描述:N沟道,30V,4A,60mΩ@10V
|
含增值税
|
||
含增值税
|
|||
描述:P沟道,-30V,-12A,13mΩ@-10V
|
含增值税
|
||
描述:P沟道,-30V,-5A,23mΩ@-10V
|
含增值税
|
||
含增值税
|
|||
含增值税
|